 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| a d v a n c e d s e m i c o n d u c t o r, i n c. rev. d 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/1 specifications are subjec t to change without notice. characteristics t c = 25 c symbol none test conditions minimum typical maximum units bv cbo i c = 20 ma 55 v bv cer i c = 40 ma r be = 10 ? 55 v bv ebo i e = 2 ma 3.5 v i ces v ce = 28 v 10 ma h fe v ce = 5.0 v i c = 2.0 a 15 150 --- p g c v cc = 28 v p out = 55 w f = 1.2 to 1.4 ghz 6.6 50 db % npn silicon rf power transistor AM81214-060 description: the asi AM81214-060 is designed for 1200 ? 1400 mhz, l-band applications. features: ? internal input/output matching network ? p g = 6.6 db at 55 w/1400 mhz ? omnigold ? metalization system maximum ratings i c 5.0 a v cc 32 v p diss 107 w @ t c = 25 c t j -65 c to +250 c t stg -65 c to +200 c jc 1.4 c/w package style .400 2l flg
|
Price & Availability of AM81214-060
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |